{"title":"充电效应对HBM ESD器件测试的影响","authors":"T. Brodbeck","doi":"10.1109/EOSESD.2000.890029","DOIUrl":null,"url":null,"abstract":"The standards for testing the ESD sensitivity of electronic components according to the HBM (MIL, JEDEC, ESDA) require a specific switch in the HBM ESD waveform generator to ensure that the socket and the DUT is not left in a charged state after the stress. The absence of this switch may result in the wrong ESD threshold levels. For two different waveform generators, the charging effect was measured by using an electrostatic voltmeter. An unexpected experimental result, showing that the HBM ESD threshold voltage strongly depends on the number of stress pulses, could be explained by the measured charging of these components. Consequences for other types of components and corrective actions are discussed.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Influence of the charging effect on HBM ESD device testing\",\"authors\":\"T. Brodbeck\",\"doi\":\"10.1109/EOSESD.2000.890029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The standards for testing the ESD sensitivity of electronic components according to the HBM (MIL, JEDEC, ESDA) require a specific switch in the HBM ESD waveform generator to ensure that the socket and the DUT is not left in a charged state after the stress. The absence of this switch may result in the wrong ESD threshold levels. For two different waveform generators, the charging effect was measured by using an electrostatic voltmeter. An unexpected experimental result, showing that the HBM ESD threshold voltage strongly depends on the number of stress pulses, could be explained by the measured charging of these components. Consequences for other types of components and corrective actions are discussed.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

根据HBM测试电子元件ESD灵敏度的标准(MIL, JEDEC, ESDA)要求在HBM ESD波形发生器中使用特定的开关,以确保插座和被测件在受力后不会处于充电状态。没有此开关可能导致错误的ESD阈值水平。对于两种不同的波形发生器,采用静电电压表测量了充电效应。一个意想不到的实验结果表明,HBM ESD阈值电压强烈依赖于应力脉冲的数量,这可以通过测量这些组件的充电来解释。讨论了其他类型部件和纠正措施的后果。
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Influence of the charging effect on HBM ESD device testing
The standards for testing the ESD sensitivity of electronic components according to the HBM (MIL, JEDEC, ESDA) require a specific switch in the HBM ESD waveform generator to ensure that the socket and the DUT is not left in a charged state after the stress. The absence of this switch may result in the wrong ESD threshold levels. For two different waveform generators, the charging effect was measured by using an electrostatic voltmeter. An unexpected experimental result, showing that the HBM ESD threshold voltage strongly depends on the number of stress pulses, could be explained by the measured charging of these components. Consequences for other types of components and corrective actions are discussed.
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