MOSFET结构中中子诱导的氧化物降解

D. Sharma, A. Chandorkar, S. vaidya
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引用次数: 4

摘要

在本文中,我们测量了在辐照位置不同中子通量下伴随中子的伽马辐射强度。MOS样品在游泳池式反应堆中接受中子辐射,同一批次的其他样品使用Co/sup 60/ γ源接受等效剂量的伴随伽马辐射。中子造成的伤害的差异。在执行该方法时,考虑的主要问题是:伴随中子的伽马辐射的校准,Co/sup 60/和伴随伽马能谱的考虑,反应堆辐照位置热中子和快中子通量的测量以及不同功率水平下通量的测量。
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Neutron induced oxide degradation in MOSFET structures
In this paper, we have measured the intensity of gamma radiation accompanying neutrons at different neutron fluences at the irradiation position. MOS samples were subjected to neutron radiation in a swimming pool type of reactor and other samples from the same batch were exposed to an equivalent dose of accompanying gamma radiation using Co/sup 60/ gamma source. The difference in the damage caused by the neutrons. While executing this approach, major issues considered were, calibration of gamma radiation accompanying neutrons, consideration of energy spectrums of Co/sup 60/ and accompanying gamma, measurement of thermal and fast neutron flux at the irradiation position of the reactor and measurement of flux at the different power levels.
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