{"title":"导电原子力显微镜在泄漏接触分析和表征上的应用","authors":"J. Chuang, J.C. Lee","doi":"10.1109/IPFA.2003.1222737","DOIUrl":null,"url":null,"abstract":"Conductive Atomic Force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate oxide integrity. In this article, C-AFM has been successfully applied to fault identification in contact level and the discrimination of various contact types. The current mapping of C-AFM can easily isolate faulty contacts. In addition, it also provide I/V curve for failure root cause judgment.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Conductive atomic force microscopy application on leaky contact analysis and characterization\",\"authors\":\"J. Chuang, J.C. Lee\",\"doi\":\"10.1109/IPFA.2003.1222737\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conductive Atomic Force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate oxide integrity. In this article, C-AFM has been successfully applied to fault identification in contact level and the discrimination of various contact types. The current mapping of C-AFM can easily isolate faulty contacts. In addition, it also provide I/V curve for failure root cause judgment.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222737\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Conductive atomic force microscopy application on leaky contact analysis and characterization
Conductive Atomic Force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate oxide integrity. In this article, C-AFM has been successfully applied to fault identification in contact level and the discrimination of various contact types. The current mapping of C-AFM can easily isolate faulty contacts. In addition, it also provide I/V curve for failure root cause judgment.