{"title":"使用应变和晶格匹配InAlAs/InGaAs异质结构的p型掺杂沟道场效应管","authors":"Y. Chan, D. Pavlidis","doi":"10.1109/ICIPRM.1990.202979","DOIUrl":null,"url":null,"abstract":"Lattice matched (x=0.53) and strained (x=0.65) In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As p-doped dual-channel FETs were fabricated and investigated experimentally. This material system offers a high carrier velocity and large bandgap discontinuity as required for high-speed operation. The design and the DC and high-frequency characteristics of the FETs are reported. The strained design enhances the intrinsic transconductance from 23 mS/mm to 46.5 mS/mm using 1.0- mu m-long gates. The cutoff frequency also improves from 1.0 GHz to 1.5 GHz.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"21 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"p-type doped channel FETs using strained and lattice matched InAlAs/InGaAs heterostructures\",\"authors\":\"Y. Chan, D. Pavlidis\",\"doi\":\"10.1109/ICIPRM.1990.202979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lattice matched (x=0.53) and strained (x=0.65) In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As p-doped dual-channel FETs were fabricated and investigated experimentally. This material system offers a high carrier velocity and large bandgap discontinuity as required for high-speed operation. The design and the DC and high-frequency characteristics of the FETs are reported. The strained design enhances the intrinsic transconductance from 23 mS/mm to 46.5 mS/mm using 1.0- mu m-long gates. The cutoff frequency also improves from 1.0 GHz to 1.5 GHz.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"21 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
p-type doped channel FETs using strained and lattice matched InAlAs/InGaAs heterostructures
Lattice matched (x=0.53) and strained (x=0.65) In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As p-doped dual-channel FETs were fabricated and investigated experimentally. This material system offers a high carrier velocity and large bandgap discontinuity as required for high-speed operation. The design and the DC and high-frequency characteristics of the FETs are reported. The strained design enhances the intrinsic transconductance from 23 mS/mm to 46.5 mS/mm using 1.0- mu m-long gates. The cutoff frequency also improves from 1.0 GHz to 1.5 GHz.<>
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