基于微波读出超导HEBs的太赫兹功率探测器

R. Su, J. Chen, P. Wu, Y. Zhang, X. Tu, X. Jia, C. H. Zhang, L. Kang, B. Jin, W. Xu, H. Wang
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引用次数: 0

摘要

本文报道了基于超导NbN热电子辐射热计(HEB)的太赫兹(THz)功率探测器的性能。研究了在不抽运、太赫兹源抽运和提高镀液温度加热的情况下,用MW探测HEB的弛豫振荡特征。反射微波信号的周期脉冲在时域和频域均表明,弛豫振荡频率随偏置电压、入射太赫兹功率和/或镀液温度的增加而增加。频率计数与偏置电压呈二次多项式拟合,与入射太赫兹功率呈线性拟合,与镀液温度呈指数拟合。基于上述结果,利用HEB测量了8 - 90nw之间的入射太赫兹功率。
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Terahertz Power Detectors based on Superconducting HEBs with Microwave Readout
The properties of terahertz (THz) power detectors based on Superconducting NbN hot electron bolometer (HEB) with microwave (MW) readout are reported here. Features of relaxation oscillations probed with MW when the HEB is not pumped, pumped by THz source or heated by raising the bath temperature are studies. The periodic pulse in the reflected MW signals both in time and frequency domains show that the relaxation oscillation frequency increases with the bias voltage, incident THz power and/or bath temperature. The frequency count forms a quadratic polynomial fit to the bias voltage, a linear fit to the incident THz power and an exponential fit to the bath temperature. Based on the above results, incident THz power between 8–90 nW is measured using the HEB.
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