R. Su, J. Chen, P. Wu, Y. Zhang, X. Tu, X. Jia, C. H. Zhang, L. Kang, B. Jin, W. Xu, H. Wang
{"title":"基于微波读出超导HEBs的太赫兹功率探测器","authors":"R. Su, J. Chen, P. Wu, Y. Zhang, X. Tu, X. Jia, C. H. Zhang, L. Kang, B. Jin, W. Xu, H. Wang","doi":"10.1109/ISEC46533.2019.8990949","DOIUrl":null,"url":null,"abstract":"The properties of terahertz (THz) power detectors based on Superconducting NbN hot electron bolometer (HEB) with microwave (MW) readout are reported here. Features of relaxation oscillations probed with MW when the HEB is not pumped, pumped by THz source or heated by raising the bath temperature are studies. The periodic pulse in the reflected MW signals both in time and frequency domains show that the relaxation oscillation frequency increases with the bias voltage, incident THz power and/or bath temperature. The frequency count forms a quadratic polynomial fit to the bias voltage, a linear fit to the incident THz power and an exponential fit to the bath temperature. Based on the above results, incident THz power between 8–90 nW is measured using the HEB.","PeriodicalId":250606,"journal":{"name":"2019 IEEE International Superconductive Electronics Conference (ISEC)","volume":"15 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Terahertz Power Detectors based on Superconducting HEBs with Microwave Readout\",\"authors\":\"R. Su, J. Chen, P. Wu, Y. Zhang, X. Tu, X. Jia, C. H. Zhang, L. Kang, B. Jin, W. Xu, H. Wang\",\"doi\":\"10.1109/ISEC46533.2019.8990949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The properties of terahertz (THz) power detectors based on Superconducting NbN hot electron bolometer (HEB) with microwave (MW) readout are reported here. Features of relaxation oscillations probed with MW when the HEB is not pumped, pumped by THz source or heated by raising the bath temperature are studies. The periodic pulse in the reflected MW signals both in time and frequency domains show that the relaxation oscillation frequency increases with the bias voltage, incident THz power and/or bath temperature. The frequency count forms a quadratic polynomial fit to the bias voltage, a linear fit to the incident THz power and an exponential fit to the bath temperature. Based on the above results, incident THz power between 8–90 nW is measured using the HEB.\",\"PeriodicalId\":250606,\"journal\":{\"name\":\"2019 IEEE International Superconductive Electronics Conference (ISEC)\",\"volume\":\"15 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Superconductive Electronics Conference (ISEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEC46533.2019.8990949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC46533.2019.8990949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Terahertz Power Detectors based on Superconducting HEBs with Microwave Readout
The properties of terahertz (THz) power detectors based on Superconducting NbN hot electron bolometer (HEB) with microwave (MW) readout are reported here. Features of relaxation oscillations probed with MW when the HEB is not pumped, pumped by THz source or heated by raising the bath temperature are studies. The periodic pulse in the reflected MW signals both in time and frequency domains show that the relaxation oscillation frequency increases with the bias voltage, incident THz power and/or bath temperature. The frequency count forms a quadratic polynomial fit to the bias voltage, a linear fit to the incident THz power and an exponential fit to the bath temperature. Based on the above results, incident THz power between 8–90 nW is measured using the HEB.