CMOS兼容非冷却微辐射热计的特性

2000 IEEE/LEOS International Conference on Optical MEMS (Cat. No.00EX399) Pub Date : 2000-08-21 DOI:10.1109/OMEMS.2000.879645

P. Lambkin, B. Lane, I. O'Heifearnan, J. Gillham, R. Eatton

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引用次数: 6

摘要

建立了一种新的、低成本的、CMOS兼容的微热计工艺。该敏感电阻元件由二氧化硅支撑的钛制成。电热表征表明，控制参数符合当前的替代技术。初步结果还表明，在8 ~ 14 /spl μ m波段的吸光度为/spl μ m/40%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterisation of CMOS compatible uncooled microbolometers

A new, low-cost, CMOS compatible microbolometer process has been established. The sensitive resistive element is formed from titanium supported by silicon dioxide. An electrothermal characterisation has shown the governing parameters are in line with current, alternative technologies. Preliminary results also indicate the absorption in the 8-14 /spl mu/m waveband is /spl sim/40%.

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2000 IEEE/LEOS International Conference on Optical MEMS (Cat. No.00EX399)

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