E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi
{"title":"微波处理增强Ta/sub 2/O/sub 5/-p-Si异质体系的结构-相有序性","authors":"E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi","doi":"10.1109/MIEL.2002.1003313","DOIUrl":null,"url":null,"abstract":"We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing\",\"authors\":\"E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi\",\"doi\":\"10.1109/MIEL.2002.1003313\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003313\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing
We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
