M. Momodomi, Y. Iwata, Tomoharu Tanaka, Y. Itoh, R. Shirota, F. Masuoka
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A high density NAND EEPROM with block-page programming for microcomputer applications
A 5 V-only 4 Mb NAND EEPROM (electrically erasable programmable read-only memory) has been successfully developed. The EEPROM has on-chip high-voltage generators, so the system needs only a 5 V power supply. The block-page erase/program mode realizes high-speed programming. On-chip test circuits provide high reliability. The NAND EEPROM has many applications for compact microcomputer systems, which need large storage systems with low power consumption
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