多量子阱反射调制器和异质结光电晶体管光子门的动态特性

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664700

S. Matsuo, C. Amano, T. Kurokawa

{"title":"多量子阱反射调制器和异质结光电晶体管光子门的动态特性","authors":"S. Matsuo, C. Amano, T. Kurokawa","doi":"10.1109/DRC.1991.664700","DOIUrl":null,"url":null,"abstract":"Summary form only given. In order to improve the switching-off speed of a photonic gate array consisting of a multiple-quantum-well (MQW) modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT), a resistor structure connected in parallel with the modulator is proposed. The bandwidth was measured as a function of the optical gain for the following two gate structures: the MQW reflection modulator connected with (1) the p-i-n photodiode in series; and (2) the HPT in series and the resistor in parallel, respectively. The results show that the addition of the resistor can reverse the increase in switching-off time due to the Miller capacitance effect with optical gain. Estimates indicate that optimizing the device size and structure will result in subnanosecond switching times with several times the optical gain. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dynamic Characteristics of Photonic Gate with Multiple-Quantum-Well Reflection Modulator and Heterojunction Phototransistor\",\"authors\":\"S. Matsuo, C. Amano, T. Kurokawa\",\"doi\":\"10.1109/DRC.1991.664700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. In order to improve the switching-off speed of a photonic gate array consisting of a multiple-quantum-well (MQW) modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT), a resistor structure connected in parallel with the modulator is proposed. The bandwidth was measured as a function of the optical gain for the following two gate structures: the MQW reflection modulator connected with (1) the p-i-n photodiode in series; and (2) the HPT in series and the resistor in parallel, respectively. The results show that the addition of the resistor can reverse the increase in switching-off time due to the Miller capacitance effect with optical gain. Estimates indicate that optimizing the device size and structure will result in subnanosecond switching times with several times the optical gain. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

只提供摘要形式。为了提高由多量子阱(MQW)调制器、分布式布拉格反射器(DBR)和异质结光电晶体管(HPT)组成的光子门阵列的关断速度，提出了一种与调制器并联的电阻结构。对于以下两种门结构，带宽作为光增益的函数进行测量:MQW反射调制器与(1)p-i-n光电二极管串联;(2) HPT串联，电阻并联。结果表明，电阻器的加入可以扭转由于米勒电容效应引起的关断时间随光增益的增加。估计表明，优化器件尺寸和结构将导致亚纳秒级的开关时间和光增益的几倍。>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dynamic Characteristics of Photonic Gate with Multiple-Quantum-Well Reflection Modulator and Heterojunction Phototransistor

Summary form only given. In order to improve the switching-off speed of a photonic gate array consisting of a multiple-quantum-well (MQW) modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT), a resistor structure connected in parallel with the modulator is proposed. The bandwidth was measured as a function of the optical gain for the following two gate structures: the MQW reflection modulator connected with (1) the p-i-n photodiode in series; and (2) the HPT in series and the resistor in parallel, respectively. The results show that the addition of the resistor can reverse the increase in switching-off time due to the Miller capacitance effect with optical gain. Estimates indicate that optimizing the device size and structure will result in subnanosecond switching times with several times the optical gain. >

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[1991] 49th Annual Device Research Conference Digest

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