{"title":"在倒装芯片球栅阵列上采用三点弯曲测量的倒装芯片硅断裂机理","authors":"K. M. Chong, H. K. Lim, Chin Seng. Ong","doi":"10.1109/IPFA.2003.1222746","DOIUrl":null,"url":null,"abstract":"In this paper, the V-shape silicon cracking was identified due to extreme bending to substrate. The fracture initialise once the stress on silicon exceed the silicon strength.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Flip chip silicon fracture mechanism with 3-point bend metrology on flip chip ball grid array\",\"authors\":\"K. M. Chong, H. K. Lim, Chin Seng. Ong\",\"doi\":\"10.1109/IPFA.2003.1222746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the V-shape silicon cracking was identified due to extreme bending to substrate. The fracture initialise once the stress on silicon exceed the silicon strength.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flip chip silicon fracture mechanism with 3-point bend metrology on flip chip ball grid array
In this paper, the V-shape silicon cracking was identified due to extreme bending to substrate. The fracture initialise once the stress on silicon exceed the silicon strength.