{"title":"基于Al-Si-Cu/TiN/Ti系统的CMOS vlsi可靠接触金属化技术","authors":"Y. Ohshima, S. Mori, K. Yoshikawa","doi":"10.1109/VMIC.1989.78012","DOIUrl":null,"url":null,"abstract":"An anomalous p/sup +/ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p/sup +/ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs\",\"authors\":\"Y. Ohshima, S. Mori, K. Yoshikawa\",\"doi\":\"10.1109/VMIC.1989.78012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An anomalous p/sup +/ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p/sup +/ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs
An anomalous p/sup +/ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p/sup +/ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability.<>
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