总电离剂量对hfo2基记忆电阻器的影响

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857731

P. Martín-Holgado, M. Maestro-Izquierdo, M. B. González, Y. Morilla, F. Campabadal

{"title":"总电离剂量对hfo2基记忆电阻器的影响","authors":"P. Martín-Holgado, M. Maestro-Izquierdo, M. B. González, Y. Morilla, F. Campabadal","doi":"10.1109/RADECS50773.2020.9857731","DOIUrl":null,"url":null,"abstract":"The effect of gamma-ray irradiation on HfO2-based memristors is investigated. Extensive electrical characterization of their resistive switching performance and assessment of data retention under irradiation indicate that the devices are resilient to radiation damage.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total Ionizing Dose Effects on HfO2-based Memristors\",\"authors\":\"P. Martín-Holgado, M. Maestro-Izquierdo, M. B. González, Y. Morilla, F. Campabadal\",\"doi\":\"10.1109/RADECS50773.2020.9857731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of gamma-ray irradiation on HfO2-based memristors is investigated. Extensive electrical characterization of their resistive switching performance and assessment of data retention under irradiation indicate that the devices are resilient to radiation damage.\",\"PeriodicalId\":371838,\"journal\":{\"name\":\"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS50773.2020.9857731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS50773.2020.9857731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了伽玛射线辐照对hfo2基忆阻器的影响。对其电阻开关性能的广泛电学表征和辐照下数据保留的评估表明，该器件对辐射损伤具有弹性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Total Ionizing Dose Effects on HfO2-based Memristors

The effect of gamma-ray irradiation on HfO2-based memristors is investigated. Extensive electrical characterization of their resistive switching performance and assessment of data retention under irradiation indicate that the devices are resilient to radiation damage.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

自引率

0.00%

发文量