{"title":"亚微米mosfet横向扩散曲线的测量","authors":"K. Kubota, Y. Kawashima, S. Yoshida, M. Ishida","doi":"10.1109/ICMTS.1990.161734","DOIUrl":null,"url":null,"abstract":"A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Measurement of lateral diffusion profiles for submicrometer MOSFETs\",\"authors\":\"K. Kubota, Y. Kawashima, S. Yoshida, M. Ishida\",\"doi\":\"10.1109/ICMTS.1990.161734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion.<<ETX>>\",\"PeriodicalId\":417292,\"journal\":{\"name\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1991 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.161734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of lateral diffusion profiles for submicrometer MOSFETs
A simple method is proposed to determine lateral diffusion profiles for MOSFETs. The method compares the gate-to-substrate capacitance for a MOSFET with the gate biased in accumulation and the source and drain slightly forward-biased to that for a MOS capacitor with no diffusions. The results can be utilized for optimal design of submicrometer devices and modeling of two-dimensional diffusion.<>
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