三维堆叠图像传感器的混合键合:节距收缩对互连鲁棒性的影响

J. Jourdon, S. Lhostis, S. Moreau, J. Chossat, M. Arnoux, C. Sart, Y. Henrion, P. Lamontagne, L. Arnaud, N. Bresson, V. Balan, C. Euvrard, Y. Exbrayat, D. Scevola, E. Deloffre, S. Mermoz, A. Martin, H. Bilgen, F. André, C. Charles, D. Bouchu, A. Farcy, S. Guillaumet, A. Jouve, H. Frémont, S. Chéramy
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引用次数: 32

摘要

混合键合是用于3D集成的高密度技术,但进一步缩小互连规模可能会危及电气和可靠性性能。从工艺、器件性能和鲁棒性角度研究了混合键合节距收缩对3D堆叠背照光CMOS图像传感器的影响,从$8.8\ \mathrm{m}$键合节距下降到$1.44\ \mathrm{m}$键合节距。结果表明,无论是热循环还是电迁移,都没有发现与较小键合垫相关的缺陷,从而验证了细间距混合键合的稳健性,并为下一代图像传感器提供了应用。
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Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness
Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from $8.8\ \mu\mathrm{m}$ down to $1.44\ \mu \mathrm{m}$ bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.
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