J. Jourdon, S. Lhostis, S. Moreau, J. Chossat, M. Arnoux, C. Sart, Y. Henrion, P. Lamontagne, L. Arnaud, N. Bresson, V. Balan, C. Euvrard, Y. Exbrayat, D. Scevola, E. Deloffre, S. Mermoz, A. Martin, H. Bilgen, F. André, C. Charles, D. Bouchu, A. Farcy, S. Guillaumet, A. Jouve, H. Frémont, S. Chéramy
{"title":"三维堆叠图像传感器的混合键合:节距收缩对互连鲁棒性的影响","authors":"J. Jourdon, S. Lhostis, S. Moreau, J. Chossat, M. Arnoux, C. Sart, Y. Henrion, P. Lamontagne, L. Arnaud, N. Bresson, V. Balan, C. Euvrard, Y. Exbrayat, D. Scevola, E. Deloffre, S. Mermoz, A. Martin, H. Bilgen, F. André, C. Charles, D. Bouchu, A. Farcy, S. Guillaumet, A. Jouve, H. Frémont, S. Chéramy","doi":"10.1109/IEDM.2018.8614570","DOIUrl":null,"url":null,"abstract":"Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from $8.8\\ \\mu\\mathrm{m}$ down to $1.44\\ \\mu \\mathrm{m}$ bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness\",\"authors\":\"J. Jourdon, S. Lhostis, S. Moreau, J. Chossat, M. Arnoux, C. Sart, Y. Henrion, P. Lamontagne, L. Arnaud, N. Bresson, V. Balan, C. Euvrard, Y. Exbrayat, D. Scevola, E. Deloffre, S. Mermoz, A. Martin, H. Bilgen, F. André, C. Charles, D. Bouchu, A. Farcy, S. Guillaumet, A. Jouve, H. Frémont, S. Chéramy\",\"doi\":\"10.1109/IEDM.2018.8614570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from $8.8\\\\ \\\\mu\\\\mathrm{m}$ down to $1.44\\\\ \\\\mu \\\\mathrm{m}$ bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness
Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from $8.8\ \mu\mathrm{m}$ down to $1.44\ \mu \mathrm{m}$ bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.