S. Azuma, Ryotatsu Yanagimoto, S. Kamitani, M. Edamoto, K. Arata, H. Matsui, H. Akada, R. Masuda, K. Hoshino, K. Nagura, H. Ogawa
{"title":"1.25Gbps光链路用于移动手持设备","authors":"S. Azuma, Ryotatsu Yanagimoto, S. Kamitani, M. Edamoto, K. Arata, H. Matsui, H. Akada, R. Masuda, K. Hoshino, K. Nagura, H. Ogawa","doi":"10.1109/ASSCC.2008.4708722","DOIUrl":null,"url":null,"abstract":"This paper presents a 1.25 Gbps optical links design for mobile handsets. The system consists of an optical connector and a SER/DES main chip. The former contains an 850 nm VCSEL (vertical cavity surface emission laser), a GaAs-PIN photodiode and a transimpedance amplifier (TIA). The later includes a serializer, a deserializer, a VCSEL driver, a limiting amplifier, a PLL and a CDR. The chip and TIA were fabricated in a 0.13 um CMOS process with MIM capacitors. A digital type CDR with fine timing controls allows sharing a VCO between transmitter and receiver, resulting in reduced both power consumption and silicon area. The system fully demonstrated a 1.25 Gbps data and video stream transmission, consuming 108.4 mW of power under 1.2 V/3.3 V supply voltages.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"1.25Gbps optical links for mobile handsets\",\"authors\":\"S. Azuma, Ryotatsu Yanagimoto, S. Kamitani, M. Edamoto, K. Arata, H. Matsui, H. Akada, R. Masuda, K. Hoshino, K. Nagura, H. Ogawa\",\"doi\":\"10.1109/ASSCC.2008.4708722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 1.25 Gbps optical links design for mobile handsets. The system consists of an optical connector and a SER/DES main chip. The former contains an 850 nm VCSEL (vertical cavity surface emission laser), a GaAs-PIN photodiode and a transimpedance amplifier (TIA). The later includes a serializer, a deserializer, a VCSEL driver, a limiting amplifier, a PLL and a CDR. The chip and TIA were fabricated in a 0.13 um CMOS process with MIM capacitors. A digital type CDR with fine timing controls allows sharing a VCO between transmitter and receiver, resulting in reduced both power consumption and silicon area. The system fully demonstrated a 1.25 Gbps data and video stream transmission, consuming 108.4 mW of power under 1.2 V/3.3 V supply voltages.\",\"PeriodicalId\":143173,\"journal\":{\"name\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2008.4708722\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
本文提出了一种用于手机的1.25 Gbps光链路设计方案。该系统由一个光连接器和一个SER/DES主芯片组成。前者包含一个850 nm垂直腔面发射激光器,一个GaAs-PIN光电二极管和一个跨阻放大器(TIA)。后者包括序列化器、反序列化器、VCSEL驱动程序、限制放大器、锁相环和CDR。该芯片和TIA采用0.13 um CMOS工艺,采用MIM电容器制造。具有精细定时控制的数字型CDR允许在发射器和接收器之间共享一个压控振荡器,从而降低功耗和硅面积。该系统充分展示了1.25 Gbps的数据和视频流传输,在1.2 V/3.3 V供电电压下消耗108.4 mW的功率。
This paper presents a 1.25 Gbps optical links design for mobile handsets. The system consists of an optical connector and a SER/DES main chip. The former contains an 850 nm VCSEL (vertical cavity surface emission laser), a GaAs-PIN photodiode and a transimpedance amplifier (TIA). The later includes a serializer, a deserializer, a VCSEL driver, a limiting amplifier, a PLL and a CDR. The chip and TIA were fabricated in a 0.13 um CMOS process with MIM capacitors. A digital type CDR with fine timing controls allows sharing a VCO between transmitter and receiver, resulting in reduced both power consumption and silicon area. The system fully demonstrated a 1.25 Gbps data and video stream transmission, consuming 108.4 mW of power under 1.2 V/3.3 V supply voltages.