基于磁电传感器的低噪声MEMS CMOS谐振器

2020 International SoC Design Conference (ISOCC) Pub Date : 2020-10-21 DOI:10.1109/ISOCC50952.2020.9332807

Mehdi Nasrollahpour, Alexei D. Matyushov, Mohsen Zaeimbashi, N. Sun

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引用次数: 1

摘要

本文提出了一种利用微电子机械系统(MEMS)谐振频率为159mhz的小型化互补金属氧化物半导体(CMOS)振荡器。设计了CMOS电路，并在0.35，…，m XFAB技术。所制磁电(ME)传感器的质量因数为653。所提出的振荡器在10kHz时提供低至-131.3 dBc/Hz的相位噪声，在100khz偏移频率时提供低至-137.9 dBc/Hz的相位噪声，同时消耗2.24 mW功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Low Noise MEMS Based CMOS Resonator Using Magnetoelectric Sensor

This paper presents a miniaturized complementary-metal-oxide-semiconductor (CMOS) oscillator using microelectromechanical system (MEMS) resonating at 159 MHz frequency. The CMOS circuit is designed and simulated in 0.35,..,m XFAB technology. The fabricated magnetoelectric (ME) sensor offers quality factor of 653. The proposed oscillator provides a phase noise as low as -131.3 dBc/Hz at 10kHz and -137.9 dBc/Hz at 100 kHz offset frequencies while consuming 2.24 mW power.

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2020 International SoC Design Conference (ISOCC)

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