低温原位磷掺杂单晶硅发射体在SiGe HBTs中的应用

ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575) Pub Date : 2002-12-19 DOI:10.1109/SMELEC.2002.1217812

A.I. Abdul-Rahim, C. Marsh, P. Ashburn, G. Booker

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引用次数: 1

摘要

SiGe异质结双极晶体管(hbt)需要低温处理，以尽量减少硼从基区扩散。本文介绍了一种低温原位掺磷单晶硅发射体的制备方法。单晶硅在670/spl℃的温度下，在特高压兼容的LPCVD簇状工具中沉积。所制晶体管的Gummel图显示出非常理想的基极和集电极电流特性。超低发射极电阻6.6 /spl ω /。/spl mu/m/sup 2/。极低的发射极电阻是由于在单晶硅发射极/硅衬底界面处的极低氧剂量为5.3/spl倍/10/sup 13/ cm/sup -2/。使用商用Silvaco TCAD ATHENA和ATLAS对晶体管的直流特性进行建模以验证结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs

SiGe Heterojunction Bipolar Transistors (HBTs) require low temperature processing in order to minimize Boron-out diffusion from the base region. In this paper a novel technique of producing low temperature in-situ Phosphorus doped single-crystal silicon emitters for application in SiGe HBTs is presented. The single-crystal silicon was deposited at a temperature of 670/spl deg/C in a UHV-compatible LPCVD cluster tool. Gummel plots of the fabricated transistors show very ideal base and collector current characteristics. An ultra low emitter resistance of 6.6 /spl Omega/./spl mu/m/sup 2/ was also obtained. The very low emitter resistance is due to very low oxygen dose of 5.3/spl times/10/sup 13/ cm/sup -2/ at the single-crystal silicon emitter/silicon substrate interface. The commercial Silvaco TCAD ATHENA and ATLAS were used to model the DC characteristics of the transistor to validate the results.

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ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)

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