经孔法快速电镀TSV工艺开发

2010 Proceedings 60th Electronic Components and Technology Conference (ECTC) Pub Date : 2010-06-01 DOI:10.1109/ECTC.2010.5490740

H. Li, E. Liao, X. Pang, H. Yu, X. Yu, J. Y. Sun

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引用次数: 28

摘要

采用TSV方法进行三维集成的挑战之一是电镀。电镀质量和电镀时间是影响TSV成本和应用的重要参数。通过在8英寸晶圆上进行直流电镀，在40分钟内实现了直径为20 μm、深度为65μm的固体Cu填充TSV (Through Si Via)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fast electroplating TSV process development for the via-last approach

One of challenge for the 3D integration by the TSV approach is the electroplating. Electroplating quality and time are important parameters for TSV cost and application. Solid Cu filling TSV (Through Si Via) with via diameter 20 μm and 65μm depth is achieved by the DC (directly current) electroplating within 40 minutes on 8 inch wafer.

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2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)

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