M. Ehinger, M. Korn, T. Schallenberg, W. Faschinger, G. Landwehr
{"title":"波长选择性宽带隙II-VI探测器","authors":"M. Ehinger, M. Korn, T. Schallenberg, W. Faschinger, G. Landwehr","doi":"10.1109/COMMAD.1998.791611","DOIUrl":null,"url":null,"abstract":"In modern technology there is a growing demand for wavelength selective, highly sensitive detectors in the visible spectral range, especially for short wavelengths. II-VI wide gap PIN photodiodes have been fabricated using ZnMgSSe and ZnSTe heterostructures grown by molecular beam epitaxy (MBE). These diodes have excellent structural and interface quality and a high external quantum efficiency (QE) of up to 60%, which is dose to the theoretical limit. Devices which use a p-type layer as a \"built in band edge filter\" for wavelengths shorter than the energy gap have a spectral response with a full width at half maximum (FWHM) down to 6.5 nn and a QE of 10%. The shape of the spectral response and the stray signal rejection is comparable to metal-dielectric type bandpass filters with an optical density of 4 for the ultraviolet. Due to the high external QE and a low dark current below 0.1 pA/mm/sup 2/, II-VI wide gap hetero PIN photodiodes surpass UV optimized Si detectors and filter detector combinations with bandwidths between 20 nm and 80 nm in detectivity in the UV spectral range.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wavelength selective wide bandgap II-VI detectors\",\"authors\":\"M. Ehinger, M. Korn, T. Schallenberg, W. Faschinger, G. Landwehr\",\"doi\":\"10.1109/COMMAD.1998.791611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In modern technology there is a growing demand for wavelength selective, highly sensitive detectors in the visible spectral range, especially for short wavelengths. II-VI wide gap PIN photodiodes have been fabricated using ZnMgSSe and ZnSTe heterostructures grown by molecular beam epitaxy (MBE). These diodes have excellent structural and interface quality and a high external quantum efficiency (QE) of up to 60%, which is dose to the theoretical limit. Devices which use a p-type layer as a \\\"built in band edge filter\\\" for wavelengths shorter than the energy gap have a spectral response with a full width at half maximum (FWHM) down to 6.5 nn and a QE of 10%. The shape of the spectral response and the stray signal rejection is comparable to metal-dielectric type bandpass filters with an optical density of 4 for the ultraviolet. Due to the high external QE and a low dark current below 0.1 pA/mm/sup 2/, II-VI wide gap hetero PIN photodiodes surpass UV optimized Si detectors and filter detector combinations with bandwidths between 20 nm and 80 nm in detectivity in the UV spectral range.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In modern technology there is a growing demand for wavelength selective, highly sensitive detectors in the visible spectral range, especially for short wavelengths. II-VI wide gap PIN photodiodes have been fabricated using ZnMgSSe and ZnSTe heterostructures grown by molecular beam epitaxy (MBE). These diodes have excellent structural and interface quality and a high external quantum efficiency (QE) of up to 60%, which is dose to the theoretical limit. Devices which use a p-type layer as a "built in band edge filter" for wavelengths shorter than the energy gap have a spectral response with a full width at half maximum (FWHM) down to 6.5 nn and a QE of 10%. The shape of the spectral response and the stray signal rejection is comparable to metal-dielectric type bandpass filters with an optical density of 4 for the ultraviolet. Due to the high external QE and a low dark current below 0.1 pA/mm/sup 2/, II-VI wide gap hetero PIN photodiodes surpass UV optimized Si detectors and filter detector combinations with bandwidths between 20 nm and 80 nm in detectivity in the UV spectral range.