{"title":"用漂移扩散和水动力输运模型模拟负微分迁移效应","authors":"G. Wedel, T. Nardmanrr, M. Schröter","doi":"10.1109/BCICTS.2018.8550970","DOIUrl":null,"url":null,"abstract":"In simulations of III-V devices, convergence issues are often observed when using drift-diffusion and hydrodynamic transport in conjunction with the negative differential mobility model. This paper explains the cause of the problem for each of the two transport models. Furthermore, known measures for achieving convergence and their implications are discussed.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect\",\"authors\":\"G. Wedel, T. Nardmanrr, M. Schröter\",\"doi\":\"10.1109/BCICTS.2018.8550970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In simulations of III-V devices, convergence issues are often observed when using drift-diffusion and hydrodynamic transport in conjunction with the negative differential mobility model. This paper explains the cause of the problem for each of the two transport models. Furthermore, known measures for achieving convergence and their implications are discussed.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8550970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8550970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect
In simulations of III-V devices, convergence issues are often observed when using drift-diffusion and hydrodynamic transport in conjunction with the negative differential mobility model. This paper explains the cause of the problem for each of the two transport models. Furthermore, known measures for achieving convergence and their implications are discussed.