Wet Chemical etching for edge Isolation of Solar cell using HNA

Solar cell efficiency is subjected to some innate variables such as Open Circuit Voltage (Voc), Short Circuit Current (Isc), and Fill Factor (FF). Parasitical elements have effect on these variables. Resistive elements are known shunt resistances and series resistance. Shunt resistance in solar panel happens due to deficiencies. Volume shunts can occur due to impurities like metal particles defilement or aluminum particle defilement while making grid fingers are nearly inconceivable to remove except damaging experimental the solar cell. In many cases, frequently occurred edge shunts caused by cracks, spots can be eliminated with different available techniques. During the making of solar cell, edge isolation process can be applied on the solar cells that affects IV characteristics of solar cell, which is critical to the efficiency. In this research work, wet chemical etching method by combination of Hydrochloric acid, Nitric acid and Nitric acid (HNA solution). This combined solution is used for experimental procedure. In experimental results, it is observed that etching with the acid solution improves the IV characteristics of solar cells and hence it ameliorates the power curves. Efficiency before etching solar cells was 3.17% and 3.90%. After etching the solar cell efficiency increase up to 5.53% and 5.31% respectively.