S.D. Colgate, G.J. Palenik, V. E. House, D. Schoenfeld, C. Simon
{"title":"用于VLSI电子器件的面积选择性金MOCVD","authors":"S.D. Colgate, G.J. Palenik, V. E. House, D. Schoenfeld, C. Simon","doi":"10.1109/VMIC.1989.78052","DOIUrl":null,"url":null,"abstract":"Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-AA-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500 degrees C) to an ambient of (C/sub 2/H/sub 5/)/sub 3/PAuCl vapor for 1 h.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Area selective gold MOCVD for VLSI electronics\",\"authors\":\"S.D. Colgate, G.J. Palenik, V. E. House, D. Schoenfeld, C. Simon\",\"doi\":\"10.1109/VMIC.1989.78052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-AA-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500 degrees C) to an ambient of (C/sub 2/H/sub 5/)/sub 3/PAuCl vapor for 1 h.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78052\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-AA-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500 degrees C) to an ambient of (C/sub 2/H/sub 5/)/sub 3/PAuCl vapor for 1 h.<>
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