一种集成金属栅极和改进的高/声压kappa/介电体的锗NMOSFET工艺

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269316

C. O. Chui, Hyoungsub Kim, P. McIntyre, K. Saraswat

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引用次数: 49

摘要

介绍了一种将金属栅极和高k介电体集成在锗上的简单、新颖的自对准栅末MOS工艺。改进了表面钝化，获得了优异的栅极介电和场隔离，以及高表面浓度和浅结的n型掺杂。传统的VLSI型Ge n- mosfet已经被制造出来。

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A germanium NMOSFET process integrating metal gate and improved hi-/spl kappa/ dielectrics

A simple and novel self-aligned gate-last MOS process integrating metal gates and high-k dielectrics on Ge has been demonstrated. Improved surface passivation for excellent gate dielectric and field isolation, and n-type dopant incorporation with high surface concentration and shallow junctions has been developed. Conventional VLSI type Ge n-MOSFETs have been fabricated.

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IEEE International Electron Devices Meeting 2003

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