用于ESD保护应用的基板泵NMOS

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890022

C. Duvvury, Sridhar Ramaswamy, A. Amerasekera, R. Cline, Bernhard H. Andresen, V. Gupta

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引用次数: 80

摘要

利用衬底泵实现多指NMOS的均匀npn保护，报道了先进的硅化CMOS技术。该器件技术的新颖之处在于实现了一个浮动的保护装置来有效地泵送保护NMOS的局部基板。通过SPICE仿真来说明器件概念和器件设计优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Substrate pump NMOS for ESD protection applications

The use of a substrate pump to achieve uniform npn protection in a multi-finger NMOS is reported for advanced CMOS technologies with silicide. The novel feature of this device technique is the implementation of a floating guardring to effectively pump the local substrate of the protection NMOS. SPICE simulations are presented to illustrate the device concept as well as the device design optimization.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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