{"title":"用改进的泡罩测试方法表征全晶圆键的非破坏性强度","authors":"M. Rabold, A. Doll, F. Goldschmidtboing, P. Woias","doi":"10.1109/MEMSYS.2006.1627805","DOIUrl":null,"url":null,"abstract":"This paper presents a novel test method for a non-destructive strength characterization of bonded silicon wafer pairs. The test is based on a controlled crack generation at the bond interface using a modified blister test method. An analytical model was used to establish an essential design parameter. Therewith, different test structures were analyzed and important information about crack generation and crack propagation were gained. Finally, the theory of controlled crack generation was verified and demonstrated by a modified blister test.","PeriodicalId":250831,"journal":{"name":"19th IEEE International Conference on Micro Electro Mechanical Systems","volume":"177 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Non-Destructive Strength Characterization of Full-Wafer Bonds Using a Modified Blister Test Method\",\"authors\":\"M. Rabold, A. Doll, F. Goldschmidtboing, P. Woias\",\"doi\":\"10.1109/MEMSYS.2006.1627805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel test method for a non-destructive strength characterization of bonded silicon wafer pairs. The test is based on a controlled crack generation at the bond interface using a modified blister test method. An analytical model was used to establish an essential design parameter. Therewith, different test structures were analyzed and important information about crack generation and crack propagation were gained. Finally, the theory of controlled crack generation was verified and demonstrated by a modified blister test.\",\"PeriodicalId\":250831,\"journal\":{\"name\":\"19th IEEE International Conference on Micro Electro Mechanical Systems\",\"volume\":\"177 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th IEEE International Conference on Micro Electro Mechanical Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2006.1627805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th IEEE International Conference on Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2006.1627805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-Destructive Strength Characterization of Full-Wafer Bonds Using a Modified Blister Test Method
This paper presents a novel test method for a non-destructive strength characterization of bonded silicon wafer pairs. The test is based on a controlled crack generation at the bond interface using a modified blister test method. An analytical model was used to establish an essential design parameter. Therewith, different test structures were analyzed and important information about crack generation and crack propagation were gained. Finally, the theory of controlled crack generation was verified and demonstrated by a modified blister test.
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