{"title":"宽带1至6 GHz 10和20瓦平衡GaN HEMT功率放大器mmic","authors":"J. Komiak, R. Lender, K. Chu, P. Chao","doi":"10.1109/CSICS.2011.6062482","DOIUrl":null,"url":null,"abstract":"Design and performance of power amplifiers that have established benchmarks for 1 to 6 GHz power are reported. The 6 mm periphery balanced amplifier achieved a P3dB of 14.5 Watts max, 11.1 Watts average, 8.2 Watts min with 46.1 % max, 31.8 % average, 18.1 % min PAE and 9.6 dB max, 8.5 dB average, 7.5 dB min power gain from 1 to 6 GHz. The 8 mm periphery balanced amplifier achieved a P5dB of 26.7 Watts max, 20.6 Watts average, 13.9 Watts min with 44.4 % max, 30.8 % average, 17.8 % min PAE and 10.6 dB max, 10 dB average, 8.4 dB min power gain from 1 to 7 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers [1, 2, 3].","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs\",\"authors\":\"J. Komiak, R. Lender, K. Chu, P. Chao\",\"doi\":\"10.1109/CSICS.2011.6062482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design and performance of power amplifiers that have established benchmarks for 1 to 6 GHz power are reported. The 6 mm periphery balanced amplifier achieved a P3dB of 14.5 Watts max, 11.1 Watts average, 8.2 Watts min with 46.1 % max, 31.8 % average, 18.1 % min PAE and 9.6 dB max, 8.5 dB average, 7.5 dB min power gain from 1 to 6 GHz. The 8 mm periphery balanced amplifier achieved a P5dB of 26.7 Watts max, 20.6 Watts average, 13.9 Watts min with 44.4 % max, 30.8 % average, 17.8 % min PAE and 10.6 dB max, 10 dB average, 8.4 dB min power gain from 1 to 7 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers [1, 2, 3].\",\"PeriodicalId\":275064,\"journal\":{\"name\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2011.6062482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs
Design and performance of power amplifiers that have established benchmarks for 1 to 6 GHz power are reported. The 6 mm periphery balanced amplifier achieved a P3dB of 14.5 Watts max, 11.1 Watts average, 8.2 Watts min with 46.1 % max, 31.8 % average, 18.1 % min PAE and 9.6 dB max, 8.5 dB average, 7.5 dB min power gain from 1 to 6 GHz. The 8 mm periphery balanced amplifier achieved a P5dB of 26.7 Watts max, 20.6 Watts average, 13.9 Watts min with 44.4 % max, 30.8 % average, 17.8 % min PAE and 10.6 dB max, 10 dB average, 8.4 dB min power gain from 1 to 7 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers [1, 2, 3].
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