{"title":"单层Ta2O5 ReRAM的3位读方案","authors":"A. Schonhals, R. Waser, S. Menzel, V. Rana","doi":"10.1109/NVMTS.2014.7060845","DOIUrl":null,"url":null,"abstract":"Complementary switching mechanism allows for distinguishing between different physical orientations of the conductive filament. In addition to the multilevel capability of single layer Ta2O5 devices, 3-bit information can also be stored and read in a single device. In this report, we present a novel read scheme, allowing for distinguishing 8 different states only by using 4 different resistive states with the pulse measurements. Variability and cycle-to-cycle stability of the single layer Ta2O5 complementary switching are also discussed in details.","PeriodicalId":275170,"journal":{"name":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"3-bit read scheme for single layer Ta2O5 ReRAM\",\"authors\":\"A. Schonhals, R. Waser, S. Menzel, V. Rana\",\"doi\":\"10.1109/NVMTS.2014.7060845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complementary switching mechanism allows for distinguishing between different physical orientations of the conductive filament. In addition to the multilevel capability of single layer Ta2O5 devices, 3-bit information can also be stored and read in a single device. In this report, we present a novel read scheme, allowing for distinguishing 8 different states only by using 4 different resistive states with the pulse measurements. Variability and cycle-to-cycle stability of the single layer Ta2O5 complementary switching are also discussed in details.\",\"PeriodicalId\":275170,\"journal\":{\"name\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"volume\":\"149 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMTS.2014.7060845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2014.7060845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Complementary switching mechanism allows for distinguishing between different physical orientations of the conductive filament. In addition to the multilevel capability of single layer Ta2O5 devices, 3-bit information can also be stored and read in a single device. In this report, we present a novel read scheme, allowing for distinguishing 8 different states only by using 4 different resistive states with the pulse measurements. Variability and cycle-to-cycle stability of the single layer Ta2O5 complementary switching are also discussed in details.
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