{"title":"Si/sub 0.2/Ge/sub 0.8/ Si太阳能电池的性能","authors":"N. R. Poespawati, A. Udhiarto, D. Hartanto","doi":"10.1109/SMELEC.2002.1217825","DOIUrl":null,"url":null,"abstract":"Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si/sub x/Ge/sub 1-x/ strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pc1d version 5.6, we investigate and analysis the performance of Si/sub 0.2/Ge/sub 0.8//Si solar cell, especially open circuit voltage, short circuit current, fill factor which will affect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si/sub x/Ge/sub 1-x/ strained layer we applied contents 80% germanium. Results show that by inserting Si/sub 0.2/Ge/sub 0.8/ strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The performance of Si/sub 0.2/Ge/sub 0.8//Si solar cell\",\"authors\":\"N. R. Poespawati, A. Udhiarto, D. Hartanto\",\"doi\":\"10.1109/SMELEC.2002.1217825\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si/sub x/Ge/sub 1-x/ strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pc1d version 5.6, we investigate and analysis the performance of Si/sub 0.2/Ge/sub 0.8//Si solar cell, especially open circuit voltage, short circuit current, fill factor which will affect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si/sub x/Ge/sub 1-x/ strained layer we applied contents 80% germanium. Results show that by inserting Si/sub 0.2/Ge/sub 0.8/ strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.\",\"PeriodicalId\":211819,\"journal\":{\"name\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2002.1217825\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217825","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The performance of Si/sub 0.2/Ge/sub 0.8//Si solar cell
Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si/sub x/Ge/sub 1-x/ strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pc1d version 5.6, we investigate and analysis the performance of Si/sub 0.2/Ge/sub 0.8//Si solar cell, especially open circuit voltage, short circuit current, fill factor which will affect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si/sub x/Ge/sub 1-x/ strained layer we applied contents 80% germanium. Results show that by inserting Si/sub 0.2/Ge/sub 0.8/ strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.