H. Stiegler, B. Ashmore, R. Bussey, M. Gill, S. Lin, M. McConnell, D. McElroy, J. Schreck, P. Shah, P. Truong, A. Esquivel, J. Paterson, B. Riemenschneider
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引用次数: 5
摘要
在0.8 μ m CMOS上制作了一个完整的4mb闪存EEPROM，并对其功能进行了验证。外围采用保守的1.0-μm特征，导致模具面积为95 mm2。该器件具有仅5v操作和全芯片或扇区擦除功能。分段架构、远程行解码和创新的设计技术提供了扇区擦除功能和高压处理，并改进了击穿保护和隔离
A full 4-Mb flash EEPROM was fabricated in 0.8-μm CMOS and its functionality was verified. Conservative 1.0-μm features were used in the periphery, resulting in a die area of 95 mm2. The device features 5-V-only operation and either full-chip or sector erase. A segmented architecture, remote row decode, and innovative design techniques provide the sector erase feature and high-voltage handling with improved breakdown protection and isolation
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