定位精度高的衬底上硅微棒的定向控制介电泳对准

A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani
{"title":"定位精度高的衬底上硅微棒的定向控制介电泳对准","authors":"A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani","doi":"10.1109/IMFEDK.2014.6867093","DOIUrl":null,"url":null,"abstract":"We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes, respectively. Furthermore, the orientation of the top and bottom face of the Si microrod is also controllable when the thicknesses of the dielectric film on the top and bottom faces are different.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Orientation-controlled dielectrophoretic alignment of silicon microrod on a substrate with high positional accuracy\",\"authors\":\"A. Shibata, Keiji Watanabe, Takuya Sato, H. Kotaki, P. Schuele, M. A. Crowder, Changqing Zhan, J. Hartzell, R. Nakatani\",\"doi\":\"10.1109/IMFEDK.2014.6867093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes, respectively. Furthermore, the orientation of the top and bottom face of the Si microrod is also controllable when the thicknesses of the dielectric film on the top and bottom faces are different.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867093\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们展示了不对称硅微棒在具有不对称电极对的玻璃基板上的定向控制介电泳排列。通过对电极施加交流偏置,超过80%的硅微棒在电极对上对齐,使得微棒的特定端与电极的特定部分相关;粗端和细端分别重叠在粗端和细端电极上。此外,当上下表面介质膜厚度不同时,硅微棒的上下表面取向也是可控的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Orientation-controlled dielectrophoretic alignment of silicon microrod on a substrate with high positional accuracy
We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes, respectively. Furthermore, the orientation of the top and bottom face of the Si microrod is also controllable when the thicknesses of the dielectric film on the top and bottom faces are different.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Surface charging effects on current stability of AlGaN/GaN HEMTs Noise performance of an implantable self-reset CMOS image sensor Understanding carrier transport in the ultimate physical scaling limit of MOSFETs Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1