{"title":"ESD n阱电阻的可扩展分析模型","authors":"Venugopal Puvvada, Venkatesh Srinivasan, Vishal Gupta","doi":"10.1109/EOSESD.2000.890113","DOIUrl":null,"url":null,"abstract":"We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A scalable analytical model for the ESD N-well resistor\",\"authors\":\"Venugopal Puvvada, Venkatesh Srinivasan, Vishal Gupta\",\"doi\":\"10.1109/EOSESD.2000.890113\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890113\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A scalable analytical model for the ESD N-well resistor
We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.