Xilinx XCKU040 FPGA客户存储器接口设计的64mev质子单事件扰动表征

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115450

Yanran P. Chen, P. Maillard, M. Hart, Jeff Barton, J. Schmitz, Patrick Kyu

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引用次数: 0

摘要

本文研究了基于Xilinx 20nm XCKU040现场可编程门阵列(FPGA)的客户存储器接口设计在64MeV质子源照射下的单事件扰动响应。提供了配置RAM (CRAM)单元上的单事件中断的结果。本文还讨论了客户存储接口设计中体系结构脆弱性因子(AVF)与设计脆弱性因子(DVF)的区别。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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64 MeV proton single-event upset characterization of customer memory interface design on Xilinx XCKU040 FPGA

This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface design is also discussed in this work.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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