D. Shan, Dedong Han, F. Huang, Yu Tian, Suoming Zhang, Y. Cong, Yi Wang, Lifeng Liu, Xing Zhang, Shengdong Zhang
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Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors
Fully transparent Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were fabricated using radio frequency sputtering at room temperature. To ensure transparency, the AZO-TFTs were fabricated on glass substrate, with SiO2 as gate insulator. Indium tin oxide (ITO) was adopted as gate and source/drain electrodes. The electrical characteristics of AZO-TFT were investigated by IDS-VDS and IDS-VGS measurements, excellent electrical properties were obtained. Furthermore, we researched the post-annealing effects on characteristics of AZO-TFT.
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