55nm SiGe-BiCMOS中具有高基频和谐波抑制的40GHz三倍频器

M. M. Pirbazari, F. Pepe, A. Mazzanti
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引用次数: 2

摘要

本文提出了一种新颖的三倍频电路拓扑结构,与利用c类晶体管的传统设计相比,它在输出端抑制驱动信号频率方面有了显著的改善。电路的有源核心近似于三阶多项式的传递特性,理想情况下只产生输入信号的三次谐波。该三倍器采用55nm SiGe-BiCMOS技术,从1.7V消耗13.6mA,在16%的分频带宽下对输入信号及其5次谐波具有~40dB的抑制作用,并且在15dB范围内对驱动信号的功率变化具有鲁棒性。
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40GHz Frequency Tripler with High Fundamental and Harmonics Rejection in 55nm SiGe-BiCMOS
This paper presents a novel frequency tripler circuit topology which yields a remarkable improvement on the suppression of the driving signal frequency at the output, compared to conventional designs exploiting transistors in class-C. The active core of the circuit approximates the transfer characteristic of a third-order polynomial that ideally produces only a third-harmonic of the input signal. Implemented in a 55nm SiGe-BiCMOS technology and consuming 13.6mA from 1.7V, the tripler demonstrates ~40dB suppression of the input signal and its 5th harmonic over 16% factional bandwidth and robustness to power variation of the driving signal over a 15dB range.
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