{"title":"钝化膜对AlGaN/GaN HEMT直流特性的影响","authors":"S. Ohi, T. Kakegami, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2014.6867065","DOIUrl":null,"url":null,"abstract":"This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Effect of passivation films on DC characteristics of AlGaN/GaN HEMT\",\"authors\":\"S. Ohi, T. Kakegami, H. Tokuda, M. Kuzuhara\",\"doi\":\"10.1109/IMFEDK.2014.6867065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.\",\"PeriodicalId\":202416,\"journal\":{\"name\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2014.6867065\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of passivation films on DC characteristics of AlGaN/GaN HEMT
This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.
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