k波段快跳频合成器的设计

Zhicheng Hu, Guolin Sun
{"title":"k波段快跳频合成器的设计","authors":"Zhicheng Hu, Guolin Sun","doi":"10.1109/ICAM.2017.8242155","DOIUrl":null,"url":null,"abstract":"The design and implementation of a K-band fast hopping frequency synthesizer based on DDS and PLL is described. Main technical specifications are as follows: frequency ranges from 24GHz to 27GHz, step frequency is 50MHz and lock time is less than 150ns. The parameters of loop filter and the analyses of phase noise and lock time are provided by MATLAB simulation to verify the feasibility of the design. Final test results of the circuits proves that the targets of performance are achieved.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of a K-band fast hopping frequency synthesizer\",\"authors\":\"Zhicheng Hu, Guolin Sun\",\"doi\":\"10.1109/ICAM.2017.8242155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and implementation of a K-band fast hopping frequency synthesizer based on DDS and PLL is described. Main technical specifications are as follows: frequency ranges from 24GHz to 27GHz, step frequency is 50MHz and lock time is less than 150ns. The parameters of loop filter and the analyses of phase noise and lock time are provided by MATLAB simulation to verify the feasibility of the design. Final test results of the circuits proves that the targets of performance are achieved.\",\"PeriodicalId\":117801,\"journal\":{\"name\":\"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAM.2017.8242155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

介绍了一种基于DDS和锁相环的k波段快跳频合成器的设计与实现。主要技术指标:频率范围24GHz ~ 27GHz,阶跃频率50MHz,锁定时间小于150ns。通过MATLAB仿真给出了环路滤波器的参数,并对相位噪声和锁相时间进行了分析,验证了设计的可行性。最终测试结果表明,电路达到了性能指标。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design of a K-band fast hopping frequency synthesizer
The design and implementation of a K-band fast hopping frequency synthesizer based on DDS and PLL is described. Main technical specifications are as follows: frequency ranges from 24GHz to 27GHz, step frequency is 50MHz and lock time is less than 150ns. The parameters of loop filter and the analyses of phase noise and lock time are provided by MATLAB simulation to verify the feasibility of the design. Final test results of the circuits proves that the targets of performance are achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An innovation tool-chain for synthesis and implementation of Xilinx FPGA devices Low offset current sensing circuit based on switched-capacitor A novel high performance SIMD 54-bit multiply array A new optical voltage sensor for linear measurement Temperature distribution and facet coating degradation analysis of 808 nm GaAs-based high-power laser diode bars
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1