Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N

Device-quality, relaxed InGaN substrates has been a topic of great interest, particularly for longer wavelength optoelectronics. This work demonstrates MBE-grown In0.2Ga0.8N with a strain relaxation of 60% corresponding to an equivalently fully relaxed In-composition of 12% achieved by growing on a GaN-on-porous GaN pseudo-substrate (PS). The surface morphology of this film was found to be free of V-defects on the surface and with a threading dislocation density comparable to that of the GaN layers beneath.