雾化学气相沉积法生长zn掺杂MgO薄膜的真空紫外发射特性

W. Kosaka, K. Ogawa, K. Kusaka, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
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引用次数: 0

摘要

采用雾状化学气相沉积法在(100)MgO衬底上生长了岩盐结构(RS)掺锌MgO薄膜。MgO同外延薄膜在6 K时在7.63 eV处出现近带边阴极发光峰。zn掺杂降低了MgO的NBE发射,或者导致NBE在7.2 eV左右作为肩带出现。进一步增加Zn前驱体源比例,在6.3 eV处观察到主要的NBE发射。研究结果为研制170 nm光谱范围的真空紫外发射器奠定了基础。
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Vacuum UV Emission Property of Zn-doped MgO films Grown by Mist Chemical Vapor Deposition Method
Rocksalt-structured (RS) Zn-doped MgO films were grown on (100) MgO substrates by the mist chemical vapor deposition method. MgO homoepitaxial film exhibited a near-band-edge (NBE) cathodoluminescence peak at 7.63 eV at 6 K. Zn-doping reduced the MgO NBE emission, and alternatively resulted in observation of NBE at around 7.2 eV as a shoulder. Further increase in Zn precursor source ratio drove observation of predominate NBE emission at 6.3 eV. The results ensure a potential to develop a vacuum UV emitter in 170 nm spectral range.
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