{"title":"基于物理的双极晶体管低温电路仿真模型","authors":"J. Liou, J. Yuan","doi":"10.1109/CICC.1989.56719","DOIUrl":null,"url":null,"abstract":"A comprehensive bipolar transistor model based on the Gummel-Poon model for low-temperature circuit simulation is presented. Low-temperature physical properties such as doping-dependent dielectric permittivity, temperature-dependent free-carrier mobility and intrinsic carrier density, and deionization of impurity dopants are included in the model. Consequently, the model does not require temperature-fitting parameters as does the Gummel-Poon model. Comparisons of the present model with the Gummel-Poon model, with experimental data, and with PISCES two-dimensional device simulation are included","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physics-based bipolar transistor model for low-temperature circuit simulation\",\"authors\":\"J. Liou, J. Yuan\",\"doi\":\"10.1109/CICC.1989.56719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A comprehensive bipolar transistor model based on the Gummel-Poon model for low-temperature circuit simulation is presented. Low-temperature physical properties such as doping-dependent dielectric permittivity, temperature-dependent free-carrier mobility and intrinsic carrier density, and deionization of impurity dopants are included in the model. Consequently, the model does not require temperature-fitting parameters as does the Gummel-Poon model. Comparisons of the present model with the Gummel-Poon model, with experimental data, and with PISCES two-dimensional device simulation are included\",\"PeriodicalId\":165054,\"journal\":{\"name\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1989.56719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physics-based bipolar transistor model for low-temperature circuit simulation
A comprehensive bipolar transistor model based on the Gummel-Poon model for low-temperature circuit simulation is presented. Low-temperature physical properties such as doping-dependent dielectric permittivity, temperature-dependent free-carrier mobility and intrinsic carrier density, and deionization of impurity dopants are included in the model. Consequently, the model does not require temperature-fitting parameters as does the Gummel-Poon model. Comparisons of the present model with the Gummel-Poon model, with experimental data, and with PISCES two-dimensional device simulation are included