{"title":"离子注入的一种新的模拟方法","authors":"Xiaokang Shi, M. Yul, Huihui Jil, Ru Huang, Xing Zhang, Jinyu Zhang","doi":"10.1109/IWJT.2004.1306864","DOIUrl":null,"url":null,"abstract":"Efficient simulations of ion implantation are very important to ultra shallow junction technology. In this paper, a new splitting method is developed, based on the quantitative description and sensitivity analysis of statistical noise. A series of formulas are deduced and some disadvantages of existing splitting methods are pointed out.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"210 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new simulation method of ion implantation\",\"authors\":\"Xiaokang Shi, M. Yul, Huihui Jil, Ru Huang, Xing Zhang, Jinyu Zhang\",\"doi\":\"10.1109/IWJT.2004.1306864\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Efficient simulations of ion implantation are very important to ultra shallow junction technology. In this paper, a new splitting method is developed, based on the quantitative description and sensitivity analysis of statistical noise. A series of formulas are deduced and some disadvantages of existing splitting methods are pointed out.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"210 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306864\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306864","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient simulations of ion implantation are very important to ultra shallow junction technology. In this paper, a new splitting method is developed, based on the quantitative description and sensitivity analysis of statistical noise. A series of formulas are deduced and some disadvantages of existing splitting methods are pointed out.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
