用深能级瞬态光谱检测垂直n+-GaAs/n−-InGaP/p+-GaAs二极管侧壁的电子陷阱

2019 19th International Workshop on Junction Technology (IWJT) Pub Date : 2019-06-01 DOI:10.23919/IWJT.2019.8802885

Hao Yu, P. Hsu, A. Vais, E. Simoen, N. Waldron, N. Collaert

{"title":"用深能级瞬态光谱检测垂直n+-GaAs/n−-InGaP/p+-GaAs二极管侧壁的电子陷阱","authors":"Hao Yu, P. Hsu, A. Vais, E. Simoen, N. Waldron, N. Collaert","doi":"10.23919/IWJT.2019.8802885","DOIUrl":null,"url":null,"abstract":"Electron traps are detected from vertical n+-GaAs/n−-InGaP/p+-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (t<inf>w</inf>) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy\",\"authors\":\"Hao Yu, P. Hsu, A. Vais, E. Simoen, N. Waldron, N. Collaert\",\"doi\":\"10.23919/IWJT.2019.8802885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron traps are detected from vertical n+-GaAs/n−-InGaP/p+-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (t<inf>w</inf>) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.\",\"PeriodicalId\":441279,\"journal\":{\"name\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IWJT.2019.8802885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWJT.2019.8802885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用深能级瞬态光谱(DLTS)探测垂直n+-GaAs/n−-InGaP/p+-GaAs二极管的电子陷阱。结合锁相窗(tw)变化DLTS和双相关DLTS (DDTLS)，我们将电子陷阱分配到二极管侧壁的表面状态。本文介绍了该方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy

Electron traps are detected from vertical n⁺-GaAs/n⁻-InGaP/p⁺-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (tw) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 19th International Workshop on Junction Technology (IWJT)

自引率

0.00%

发文量