{"title":"SiGe HBT中高集成度毫米波收发器设计的思考","authors":"V. Issakov, S. Trotta","doi":"10.1109/IEDM.2018.8614534","DOIUrl":null,"url":null,"abstract":"This paper addresses considerations on design of highly-integrated transceivers at mm-wave frequencies. Several aspects are discussed such as SiGe HBT scaling and co-design optimization. A highly-integrated chip operating at V-band for backhaul communication is shown as an example.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Considerations on Design of Highly-Integrated Millimeter-Wave Transceivers in SiGe HBT\",\"authors\":\"V. Issakov, S. Trotta\",\"doi\":\"10.1109/IEDM.2018.8614534\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses considerations on design of highly-integrated transceivers at mm-wave frequencies. Several aspects are discussed such as SiGe HBT scaling and co-design optimization. A highly-integrated chip operating at V-band for backhaul communication is shown as an example.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"150 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614534\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614534","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Considerations on Design of Highly-Integrated Millimeter-Wave Transceivers in SiGe HBT
This paper addresses considerations on design of highly-integrated transceivers at mm-wave frequencies. Several aspects are discussed such as SiGe HBT scaling and co-design optimization. A highly-integrated chip operating at V-band for backhaul communication is shown as an example.
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