超高吞吐量光通信系统用飞秒半导体光电器件

O. Wadu
{"title":"超高吞吐量光通信系统用飞秒半导体光电器件","authors":"O. Wadu","doi":"10.1109/COMMAD.1998.791583","DOIUrl":null,"url":null,"abstract":"Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Femtosecond semiconductor optoelectronic devices for ultrahigh throughput optical communications systems\",\"authors\":\"O. Wadu\",\"doi\":\"10.1109/COMMAD.1998.791583\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791583\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791583","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

超快光电器件对于满足未来网络吞吐量进入1tb /s到10tb /s范围的要求至关重要。基于inp的半导体中的各种超快现象对开发这种新型光电器件具有吸引力。本文讨论了超高速光通信和信号处理系统的要求及其所需的器件。介绍了基于半导体的超快光电器件的最新进展,如超短脉冲激光器和超快全光开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Femtosecond semiconductor optoelectronic devices for ultrahigh throughput optical communications systems
Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
InGaP/GaAs resonant-tunneling transistor (RTT) Gallium arsenide technology for low-power, high performance processor cores Thick-film gas and humidity sensing array based on semiconducting metal oxides Compact modeling of high-frequency, small-dimension bipolar transistors Magneto-transport studies in AlGaN/GaN MODFETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1