采用低边壁粗糙度的深度反应离子蚀刻技术，开发了一种单步锥形蚀刻工艺，用于硅通孔应用

2012 IEEE 14th Electronics Packaging Technology Conference (EPTC) Pub Date : 2012-12-01 DOI:10.1109/EPTC.2012.6507179

S. Praveen, Muhammad Rawi Mohamed Zain, Zhang Xin, David J. Johnson

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引用次数: 1

摘要

本文讨论了在TSV集成过程中具有锥形通孔的重要性以及目前用于实现它的各种方法。此外，还提出了一种利用单步深度反应离子蚀刻(DRIE)工艺来实现这种锥形通孔的新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of a single step via tapering etch process using deep reactive ion etching with low sidewall roughness for through-silicon via applications

This paper discusses the importance of having a tapered via in TSV integration processes and the various ways currently used to achieve it. In addition, a novel way of creating this tapered via with single step Deep Reactive Ion Etching (DRIE) process to achieve it is also presented.

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2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)

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