45至60 ghz两频段SiGe: C压控振荡器,用于毫米波应用

Ja-yol Lee, Sang-Heung Lee, Hae-cheon Kim, Hyun-Kyu Yu
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引用次数: 8

摘要

采用0.25 μ m SiG:C BiCMOS工艺技术,设计并制作了一种fmax大于200ghz的45 ~ 60ghz两频段双交叉耦合差分压控振荡器。当其偏置电流为13ma时,VCO提供44.9 - 48.9 GHz的调谐范围,当输入7ma的偏置电流时,VCO提供58 - 60.4 GHz的调谐范围。在10 MHz偏置时,VCO的相位噪声分别为- 99 dBc/Hz和- 93 dBc/Hz。VCO在60.32 GHz和48.86 GHz频段分别表现出156 dBc和158 dBc的适中的fom。
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A 45-to-60-GHz Two-Band SiGe: C VCO for Millimeter-Wave Applications
A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 mum SiG:C BiCMOS process technology whose fmax is greater than 200 GHz. The VCO provides tuning ranges of 44.9 - 48.9 GHz when its bias current is 13 mA and of 58 - 60.4 GHz when a bias current of 7 mA draws into the VCO. The phase noises of the VCO are measured as - 99 dBc/Hz from 48.86 GHz and - 93 dBc/Hz from 60.32 GHz, at 10 MHz offset, respectively. The VCO shows moderate FOMs of 156 dBc at 60.32 GHz and 158 dBc at 48.86 GHz.
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