decanano无重叠MOS器件的二维QM仿真与优化

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269257

R. Gusmeroli, A. Spinelli, A. Pirovano, A. Lacaita, F. Boeuf, T. Skotnicki

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引用次数: 15

摘要

提出了非重叠MOS器件的二维量子力学(2D QM)模拟，并通过与实验数据的比较验证了其有效性。结果表明，二维QM仿真需要准确地预测实验结果，从而可以用于探索设计权衡和优化性能。仿真结果表明，与传统方法相比，非重叠MOS结构可将切换时间提高约50%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2D QM simulation and optimization of decanano non-overlapped MOS devices

Two-dimensional quantum-mechanical (2D QM) simulations of non-overlapped MOS devices are presented, validated through comparison against experimental data. It is shown that 2D QM simulations are needed to accurately predict the experiments and can thus be used to explore the design trade-offs and optimize the performance. Simulations show that nonoverlapped MOS structures can provide an improvement in switching time up to about 50% with respect to conventional approaches.

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IEEE International Electron Devices Meeting 2003

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