{"title":"远距离通信异构集成10Gb/s CMOS光电接收机","authors":"H. Sharifi, S. Mohammadi","doi":"10.1109/RFIC.2007.380936","DOIUrl":null,"url":null,"abstract":"A fully integrated 10 Gb/s 1.3 to 1.55 mum CMOS optoelectronic receiver is demonstrated for the first time. By heterogeneously integrating of a CMOS transimpedance amplifier (TIA) with an InGaAs/InP PIN photodiode using a recently developed self-aligned wafer-level integration technology (SAWLIT), operation at 10 Gb/s is achieved. The CMOS transimpedance amplifier exhibits a transimpedance gain of 51 dBOmega and a bandwidth of 6.1 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication\",\"authors\":\"H. Sharifi, S. Mohammadi\",\"doi\":\"10.1109/RFIC.2007.380936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated 10 Gb/s 1.3 to 1.55 mum CMOS optoelectronic receiver is demonstrated for the first time. By heterogeneously integrating of a CMOS transimpedance amplifier (TIA) with an InGaAs/InP PIN photodiode using a recently developed self-aligned wafer-level integration technology (SAWLIT), operation at 10 Gb/s is achieved. The CMOS transimpedance amplifier exhibits a transimpedance gain of 51 dBOmega and a bandwidth of 6.1 GHz.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver for Long Haul Telecommunication
A fully integrated 10 Gb/s 1.3 to 1.55 mum CMOS optoelectronic receiver is demonstrated for the first time. By heterogeneously integrating of a CMOS transimpedance amplifier (TIA) with an InGaAs/InP PIN photodiode using a recently developed self-aligned wafer-level integration technology (SAWLIT), operation at 10 Gb/s is achieved. The CMOS transimpedance amplifier exhibits a transimpedance gain of 51 dBOmega and a bandwidth of 6.1 GHz.