非平面多栅SOI场效应管中单事件效应的考虑

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563584

M. Alles, D. Ball, L. Massengill, peixiong zhao, K. Warren, R. Weller

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引用次数: 5

摘要

电源电压和器件尺寸的降低，以及先进电路中晶体管电路的增加，使得单事件效应越来越重要。非平面多栅极场效应管(mugfet)正在考虑/spl / 45纳米技术。在这项工作中，我们使用能量沉积和器件模拟来研究先进mugfet中SEE的问题。

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Considerations for single event effects in non-planar multi-gate SOI FETs

Reductions in supply voltage and device dimensions, and increased transistor circuits in advanced circuits, make single event effects increasingly relevant. Non-planar multiple-gate FETs (MugFETs) are under consideration for /spl les/ 45 nm technology generations. In this work, we examine issues for SEE in advanced MugFETs using energy deposition and device simulations.

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2005 IEEE International SOI Conference Proceedings

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