单事件效应在功率mosfet:物理机制和硬化通过三维模拟

2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS) Pub Date : 2018-07-01 DOI:10.1109/CIRSYSSIM.2018.8525888

Zhu Ming, Wang Tong, Gu Hantian, Qu Ruoyuan, Zhu Hengjing, Z. Wei, Tang Min

{"title":"单事件效应在功率mosfet:物理机制和硬化通过三维模拟","authors":"Zhu Ming, Wang Tong, Gu Hantian, Qu Ruoyuan, Zhu Hengjing, Z. Wei, Tang Min","doi":"10.1109/CIRSYSSIM.2018.8525888","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrate the feasibility and necessity of 3D numerical simulation in the quantitative study of burn-out and latch-up effects in VDMOS and LDMOS power transistors. Insight of which lead to a novel LDMOS layout that is immune to SEL proposed in this paper.","PeriodicalId":127121,"journal":{"name":"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Single-Event Effects in Power MOSFETs: Physical Mechanism and Hardening through 3D Simulations\",\"authors\":\"Zhu Ming, Wang Tong, Gu Hantian, Qu Ruoyuan, Zhu Hengjing, Z. Wei, Tang Min\",\"doi\":\"10.1109/CIRSYSSIM.2018.8525888\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we demonstrate the feasibility and necessity of 3D numerical simulation in the quantitative study of burn-out and latch-up effects in VDMOS and LDMOS power transistors. Insight of which lead to a novel LDMOS layout that is immune to SEL proposed in this paper.\",\"PeriodicalId\":127121,\"journal\":{\"name\":\"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIRSYSSIM.2018.8525888\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIRSYSSIM.2018.8525888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文论证了三维数值模拟定量研究VDMOS和LDMOS功率晶体管燃尽和锁存效应的可行性和必要性。基于此，本文提出了一种不受SEL影响的新型LDMOS布局。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Single-Event Effects in Power MOSFETs: Physical Mechanism and Hardening through 3D Simulations

In this paper, we demonstrate the feasibility and necessity of 3D numerical simulation in the quantitative study of burn-out and latch-up effects in VDMOS and LDMOS power transistors. Insight of which lead to a novel LDMOS layout that is immune to SEL proposed in this paper.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)

自引率

0.00%

发文量

期刊最新文献

Research on Neutral Point Potential Balance of Three-Level Inverter Ticket Market Design Based on Permissionless Blockchain An Improved Algorithm for Tracking Mulitiple Extended Targets Based on Measurement Set Partitioning A 1mW 20MHz Bandwidth 9.51-ENOB Dynamic-Amplifier-Based Noise-Shaping SAR ADC Compact RF MEMS Antenna with Silicon Substrate