柔性Vth finfet与9纳米厚极薄盒

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404371

K. Endo, S. Migita, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

{"title":"柔性Vth finfet与9纳米厚极薄盒","authors":"K. Endo, S. Migita, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara","doi":"10.1109/SOI.2012.6404371","DOIUrl":null,"url":null,"abstract":"For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX\",\"authors\":\"K. Endo, S. Migita, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara\",\"doi\":\"10.1109/SOI.2012.6404371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们首次在世界上最薄的9纳米厚的极薄(ET) BOX SOI衬底上成功制造了第v个可控连接多栅极FinFET。实验证明，通过控制后置(衬底)偏置，ETBOX上FinFET的Vth可以灵活地从低Vth调整到高Vth，同时保持低亚阈值斜率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX

For the first time, we have successfully fabricated the V_th controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the V_th of the FinFET on the ETBOX is flexibly tuned from low V_th to high V_th with keeping low sub-threshold slope.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量

期刊最新文献

BSIM-IMG: A Turnkey compact model for fully depleted technologies SOI tri-gate nanowire MOSFETs for ultra-low power LSI Key enabling processes for more-than-moore technologies High voltage SOI MESFETs at the 45nm technology node Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K